sot-89-3l 1. base 2. collector 3. emitter sot-89-3l plastic-encapsulate transistors 2SC1766 transistor (npn) features z small flat package z high speed switching time z low collector-emitter saturation voltage applications z power amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v, i c =0.5a 82 390 dc current gain h fe(2) * v ce =2v, i c =2a 20 collector-emitter saturation voltage v ce(sat) i c =1a,i b =50ma 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b =50ma 1.2 v transition frequency f t v ce =2v,i c =0.5a,f=100mhz 120 mhz classification of h fe(1) rank p q y range 82 C 180 120 C 270 180 C 390 marking p1766 q1766 y1766 *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 2 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.1 1 10 100 1000 200 400 600 800 1000 1200 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1 10 100 1000 10 100 1000 0 200 400 600 800 1000 1200 0.1 1 10 100 1000 01234 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 1 10 100 1000 10 20 30 40 50 60 70 1 10 100 1000 1 10 100 1000 1 10 100 1000 =20 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 f t ?? i c p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 2SC1766 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v 2000 collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a =2 5 t a = 1 0 0 common emitter v ce =2v static characteristic common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) capacitance c (pf) reverse voltage v (v) 30 c ob /c ib ?? v cb /v eb f=1mhz i e =0/i c =0 t a =25 c ob c ib 5.6 common emitter vce=2v t a =25 collector current i c (ma) transition frequency f t (mhz) 0.4 1.1 2000 2000 2000 =20 t a = 10 0 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 6.0ma 5.4ma 4.8ma 4.2ma 3.6ma 3.0ma 1.2ma 1.8ma 2.4ma i b =0.6ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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